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ADMCF328BN データシート(PDF) 3 Page - Analog Devices |
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ADMCF328BN データシート(HTML) 3 Page - Analog Devices |
3 / 36 page –3– REV. A ADMCF328 VOLTAGE REFERENCE Parameter Min Typ Max Unit Conditions/Comments Voltage Level (VREF)2.40 2.50 2.60 V 2.45 2.50 2.55 V TA = 25 °C to 85°C SOIC Output Voltage Drift 35 ppm/ °C Specifications subject to change without notice. ISENSE Amplifier–TRIP Parameter Min Typ Max Unit Conditions/Comments ISENSE Gain –5.7 –5.1 –4.7 VIN = –0.4 V to 0.0 V ISENSE Current –320 +10 µAV IN = –0.4 V to VDD – 1.0 V ISENSE Input Offset Voltage 80 160 240 mV Trip Voltage (VTRIP) –0.70 –0.57 –0.45 V Specifications subject to change without notice. POWER-ON RESET Parameter Min Typ Max Unit Conditions/Comments Reset Threshold (VRST) 3.2 3.7 4.2 V Hysteresis (VHYST) 100 mV Reset Active Timeout Period ( tRST) 3.2 * ms *216 CLKOUT Cycles. Specifications subject to change without notice. FLASH MEMORY Parameter Min Typ Max Unit Conditions/Comments Endurance 10,000 Cycles Cycle = Erase/Program/Verify Data Retention 15 Years Program and Erase Operating Temperature 0 85 C Read Operating Temperature –40 +85 C Specifications subject to change without notice. |
同様の部品番号 - ADMCF328BN |
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同様の説明 - ADMCF328BN |
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