データシートサーチシステム |
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FOD817C データシート(PDF) 2 Page - Fairchild Semiconductor |
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FOD817C データシート(HTML) 2 Page - Fairchild Semiconductor |
2 / 12 page ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD814 Series, FOD817 Series Rev. 1.1.5 2 Absolute Maximum Ratings (T A = 25°C Unless otherwise specified.) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Value Units FOD814 FOD817 TOTAL DEVICE TSTG Storage Temperature -55 to +150 °C TOPR Operating Temperature -55 to +105 -55 to +110 °C TSOL Lead Solder Temperature 260 for 10 sec °C TJ Junction Temperature 125 Max. °C θJC Junction-to-Case Thermal Resistance 210 °C/W PTOT Total Power Dissipation 200 mW EMITTER IF Continuous Forward Current ±50 50 mA VR Reverse Voltage 6 PD Power Dissipation Derate above 100°C 70 1.7 mW mW/°C DETECTOR VCEO Collector-Emitter Voltage 70 V VECO Emitter-Collector Voltage 6 V IC Continuous Collector Current 50 mA PC Collector Power Dissipation Derate above 90°C 150 2.9 mW mW/°C |
同様の部品番号 - FOD817C |
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同様の説明 - FOD817C |
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