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PZT2907AT1 データシート(PDF) 2 Page - Motorola, Inc |
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PZT2907AT1 データシート(HTML) 2 Page - Motorola, Inc |
2 / 6 page PZT2907AT1 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(2) DC Current Gain (IC = – 0.1 mAdc, VCE = –10 Vdc) (IC = –1.0 mAdc, VCE = –10 Vdc) (IC = –10 mAdc, VCE = –10 Vdc) (IC = –150 mAdc, VCE = –10 Vdc) (IC = – 500 mAdc, VCE = –10 Vdc) hFE 75 100 100 100 50 — — — — — — — — 300 — — Collector-Emitter Saturation Voltages (IC = –150 mAdc, IB = –15 mAdc) (IC = – 500 mAdc, IB = – 50 mAdc) VCE(sat) — — — — – 0.4 –1.6 Vdc Base-Emitter Saturation Voltages (IC = –150 mAdc, IB = –15 mAdc) (IC = – 500 mAdc, IB = – 50 mAdc) VBE(sat) — — — — –1.3 – 2.6 Vdc DYNAMIC CHARACTERISTICS Current-Gain — Bandwidth Product (IC = – 50 mAdc, VCE = – 20 Vdc, f = 100 MHz) fT 200 — — MHz Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cc — — 8.0 pF Input Capacitance (VEB = – 2.0 Vdc, IC = 0, f = 1.0 MHz) Ce — — 30 pF SWITCHING TIMES Turn-On Time (VCC = – 30 Vdc, IC = –150 mAdc, IB1 = –15 mAdc) ton — — 45 ns Delay Time (VCC = – 30 Vdc, IC = –150 mAdc, IB1 = –15 mAdc) td — — 10 Rise Time IB1 = –15 mAdc) tr — — 40 Turn-Off Time (VCC = – 6.0 Vdc, IC = –150 mAdc, IB1 = IB2 = –15 mAdc) toff — — 100 ns Storage Time (VCC = – 6.0 Vdc, IC = –150 mAdc, IB1 = IB2 = –15 mAdc) ts — — 80 Fall Time IB1 = IB2 = –15 mAdc) tf — — 30 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle = 2.0%. Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit INPUT Zo = 50 Ω PRF = 150 Hz RISE TIME ≤ 2.0 ns 0 1.0 k 50 – 16 V 200 ns – 30 V 200 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns 0 1.0 k 50 – 30 V 200 ns – 6.0 V 37 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns +15 V 1.0 k 1N916 INPUT Zo = 50 Ω PRF = 150 Hz RISE TIME ≤ 2.0 ns |
同様の部品番号 - PZT2907AT1 |
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同様の説明 - PZT2907AT1 |
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