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2SA1241Y データシート(PDF) 3 Page - Toshiba Semiconductor

部品番号 2SA1241Y
部品情報  TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SA1241Y データシート(HTML) 3 Page - Toshiba Semiconductor

  2SA1241Y Datasheet HTML 1Page - Toshiba Semiconductor 2SA1241Y Datasheet HTML 2Page - Toshiba Semiconductor 2SA1241Y Datasheet HTML 3Page - Toshiba Semiconductor 2SA1241Y Datasheet HTML 4Page - Toshiba Semiconductor 2SA1241Y Datasheet HTML 5Page - Toshiba Semiconductor  
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2SA1241
2010-08-24
3
Collector current IC (A)
VCE – IC
VCE – IC
Collector current IC (A)
Collector current IC (A)
VCE – IC
Collector current IC (A)
hFE – IC
Collector current IC (A)
VCE (sat) – IC
Collector current IC (A)
VBE (sat) – IC
Common emitter
VCE = −2 V
1000
10
−0.005
500
30
50
100
300
−0.01
−0.03
−0.1
−0.3
−1
−3
Tc = 100°C
−55
25
Common emitter
IC/IB = 20
−10
−0.1
−0.005
−5
−0.3
−0.5
−1
−3
−0.01
−0.03
−0.1
−0.3
−1
−3
Tc = −55°C
25
100
Common emitter
IC/IB = 20
−1
−0.01
−0.005
−0.5
−0.03
−0.05
−0.1
−0.3
−0.01
−0.03
−0.1
−0.3
−1
−3
Tc = 100°C
−55
25
Common emitter
Tc = 25°C
0
0
−1.0
−0.2
IB = −5 mA
−0.4
−0.6
−0.8
−0.4
−0.8
−1.2
−1.6
−2.0
−2.4
−80
−200
−40
−20
−120
−2.8
−160
−10
Common emitter
Tc = 100°C
0
0
−1.0
−0.2
IB = −5 mA
−0.4
−0.6
−0.8
−0.4
−0.8
−1.2
−1.6
−2.0
−2.4
−80
−30
−60
−40
−180
−2.8
−200
−160
−120
−20
0
0
−1.0
−0.2
IB = −10 mA
−0.4
−0.6
−0.8
−0.4
−0.8
−1.2
−1.6
−2.0
−2.4
−120
−80
−30
−20
−160
−2.8
−200
−60
−40
Common emitter
Tc = −55°C


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