CSD19501KCS datasheet(1/10 Pages) TI1

部品番号	CSD19501KCS

部品情報	CSD19501KCS, 80 V N-Channel NexFET Power MOSFETs

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VGS - Gate-to- Source Voltage (V)

TC = 25°C,I D = 60A

TC = 125°C,I D = 60A

G001

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Qg - Gate Charge (nC)

ID = 60A

VDS = 40V

G001

Gate

(Pin 1)

Drain (Pin 2)

Source (Pin 3)

CSD19501KCS

www.ti.com

SLPS478 – JANUARY 2014

CSD19501KCS, 80 V N-Channel NexFET™ Power MOSFETs

Check for Samples: CSD19501KCS

1

FEATURES

2

•

Ultra-Low Qg and Qgd

PRODUCT SUMMARY

•

Low Thermal Resistance

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-Source Voltage

80

V

•

Avalanche Rated

Qg

Gate Charge Total (10 V)

38

nC

•

Pb-Free Terminal Plating

Qgd

Gate Charge Gate to Drain

5.8

nC

•

RoHS Compliant

VGS = 6 V

6.2

m

Ω

RDS(on)

Drain-to-Source On Resistance

•

Halogen Free

VGS = 10 V

5.5

m

Ω

•

TO-220 Plastic Package

VGS(th)

Threshold Voltage

2.6

V

APPLICATIONS

ORDERING INFORMATION

Device

Package

Media

Qty

Ship

•

Secondary Side Synchronous Rectifier

TO-220 Plastic

•

Motor Control

CSD19501KCS

Tube

50

Tube

Package

DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

This 80 V, 5.5 m

Ω, TO-220 NexFET™ power

TA = 25°C

VALUE

UNIT

MOSFET is designed to minimize losses in power

VDS

Drain-to-Source Voltage

80

V

conversion applications.

VGS

Gate-to-Source Voltage

±20

V

Continuous Drain Current (Package limited)

100

Pinout Drawing

Continuous Drain Current (Silicon limited),

129

ID

TC = 25°C

A

Continuous Drain Current (Silicon limited),

91

TC = 100°C

IDM

Pulsed Drain Current (1)

146

A

PD

Power Dissipation

217

W

TJ,

Operating Junction and

–55 to 175

°C

TSTG

Storage Temperature Range

Avalanche Energy, single pulse

EAS

211

mJ

ID = 65 A, L = 0.1 mH, RG = 25 Ω

(1) Pulse duration

≤ 300 μs, Duty cycle ≤ 1%

RDS(on) vs VGS

GATE CHARGE

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

2

NexFET is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

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