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CSD19502Q5B データシート(PDF) 5 Page - Texas Instruments |
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CSD19502Q5B データシート(HTML) 5 Page - Texas Instruments |
5 / 13 page 0 20 40 60 80 100 120 −50 −25 0 25 50 75 100 125 150 175 TC - Case Temperature (ºC) G001 0.1 1 10 100 1000 10000 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) 10us 100us 1ms 10ms DC Single Pulse Width Max RthetaJC = 0.8ºC/W G001 10 100 0.01 0.1 1 TAV - Time in Avalanche (mS) TC = 25ºC TC = 125ºC G001 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 −75 −25 25 75 125 175 TC - Case Temperature (ºC) VGS = 6V VGS = 10V ID =19A G001 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 VSD − Source-to-Drain Voltage (V) TC = 25°C TC = 125°C G001 CSD19502Q5B www.ti.com SLPS413 – DECEMBER 2013 TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING Figure 8. Normalized On-State Resistance vs. Temperature Figure 9. Typical Diode Forward Voltage TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching TEXT ADDED FOR SPACING Figure 12. Maximum Drain Current vs. Temperature Copyright © 2013, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: CSD19502Q5B |
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同様の説明 - CSD19502Q5B |
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