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BC807 データシート(PDF) 1 Page - KODENSHI_AUK CORP. |
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BC807 データシート(HTML) 1 Page - KODENSHI_AUK CORP. |
1 / 4 page KSD-T5C023-000 1 BC807 PNP Silicon Transistor PIN Connection SOT-23 Descriptions • High current application • Switching application Features • Suitable for AF-Driver stage and low power output stages • Complementary Pair with BC817 Ordering Information Type NO. Marking Package Code0 BC807 LA □ □ ① ② ③ SOT-23 ① Device Code ② hFE Rank ③ Year&Week Code Absolute maximum ratings (Ta=25 °C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -50 V Collector-Emitter voltage VCEO -35 V Emitter-base voltage VEBO -5 V Collector current IC -800 mA Collector dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25 °C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -35 - - V Base-Emitter turn on voltage VBE(ON) VCE=-1V, IC=-300mA - - -1.2 V Collector-Emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA - - -700 mV Collector cut-off current ICBO VCB=-25V, IE=0 - - -100 nA DC current gain hFE * VCE=-1V, IC=-100mA 100 - 630 - Transition frequency fT VCB=-5V, IE=10mA f=100MHz - 100 - MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz - 16 - pF * : hFE rank / 16(A):100 ~ 250, 25(B):160 ~ 400, 40(C):250 ~ 630 B E C |
同様の部品番号 - BC807 |
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同様の説明 - BC807 |
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