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KSD13005A データシート(PDF) 2 Page - SemiHow Co.,Ltd.

部品番号 KSD13005A
部品情報  Switch Mode series NPN silicon Power Transistor
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メーカー  SEMIHOW [SemiHow Co.,Ltd.]
ホームページ  http://www.semihow.com
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◎ SEMIHOW REV.A1,August 2013
Switch Mode series NPN silicon Power Transistor
- High voltage, high speed power switching
- Suitable for switching regulator, inverters motor controls
KSU13005A/KSU13005A
CHARACTERISTICS
SYMBOL
RATING
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Tc=25℃)
Max. Operating Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
700
400
9
4
8
2
40
150
-65~150
V
V
V
A
A
A
W
4 Amperes
NPN Silicon Power Transistor
40 Watts
Absolute Maximum Ratings TC=25℃ unless otherwise noted
CHARACTERISTICS
SYMBOL
Test Condition
Min
Typ.
Max
Unit
Collector-Emitter Breakdown Voltage
V
CEO
I
C=10mA, IB=0
400
V
Emitter Cut-off Current
I
EBO
V
EB=9V,IC=0
1
mA
*DC Current Gain
h
FE1
h
FE2
V
CE=5V,IC=1A
V
CE=5V,IC=2A
10
8
60
40
*Collector-Emitter Saturation Voltage
V
CE(sat)
I
C=1A,IB=0.2A
I
C=2A,IB=0.5A
I
C=4A,IB=1A
0.5
0.6
1
V
V
V
*Base-Emitter Saturation Voltage
V
BE(sat)
I
C=1A,IB=0.2A
I
C=2A,IB=0.5A
1.2
1.6
V
V
Output Capacitance
C
ob
V
CB=10V, f=0.1MHz
65
Current Gain Bandwidth Product
f
T
V
CE=10V,IC=0.5A
4
Turn on Time
t
on
Vcc=125V, Ic=2A
I
B1=0.4A, IB2= -0.4A
R
L=62.5Ω
0.8
Storage Time
t
stg
4.0
Fall Time
t
F
0.9
Electrical Characteristics TC=25℃ unless otherwise noted
* Pulse Test: Pulse Width
≤300μs, Duty Cycle≤2%
TO-252 / TO-251
1. Base
2. Collector
3. Emitter
hFE1
Classification
R
19 ~ 28
O
26 ~ 35
Y
33 ~ 40
Note.
S
YWW
Z
KSU13005A
S
SemiHow Symbol
YWW
Y; year code, WW; week code
Z
hFE1 Classification
Package Mark information.
D-PAK
I-PAK
2
1
2
3
1
3
KSD13005A KSU13005A


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