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SI4565ADY データシート(PDF) 1 Page - Vishay Siliconix |
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SI4565ADY データシート(HTML) 1 Page - Vishay Siliconix |
1 / 15 page Vishay Siliconix Si4565ADY Document Number: 73880 S09-0393-Rev. B, 09-Mar-09 www.vishay.com 1 N- and P-Channel 40-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • CCFL Inverter PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) N-Channel 40 0.039 at VGS = 10 V 6.6 6.6 0.050 at VGS = 4.5 V 5.8 P-Channel - 40 0.054 at VGS = - 10 V - 4.5 9 0.072 at VGS = - 4.5 V - 3.9 S1 D1 G1 D1 S2 D2 G2 D2 SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4565ADY-T1-E3 (Lead (Pb)-free) Si4565ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET D1 G1 S1 S2 G2 D2 P-Channel MOSFET Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 120 °C/W (N-Channel) and 110 °C/W (P-Channel). ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 40 - 40 V Gate-Source Voltage VGS ± 16 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 6.6 - 5.6 A TC = 70 °C 5.3 - 4.5 TA = 25 °C 5.3b, c - 4.5b, c TA = 70 °C 4.2b, c - 3.6b, c Pulsed Drain Current (10 µs Pulse Width) IDM 30 - 30 Source-Drain Current Diode Current TC = 25 °C IS 2.5 - 2.5 TA = 25 °C 1.7b, c - 1.7b, c Pulsed Source-Drain Current ISM 30 - 30 Single Pulse Avalanche Current L = 0.1 mH IAS 13 16 Single Pulse Avalanche Energy EAS 8.5 13 mJ Maximum Power Dissipation TC = 25 °C PD 3.1 3.1 W TC = 70 °C 22 TA = 25 °C 2b, c 2b, c TA = 70 °C 1.28b, c 1.28b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS N-Channel P-Channel Parameter Symbol Typ. Max. Typ. Max. Unit Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 52 62.5 50 62.5 °C/W Maximum Junction-to-Foot (Drain) Steady-State RthJF 32 40 30 38 |
同様の部品番号 - SI4565ADY |
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同様の説明 - SI4565ADY |
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