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L6235PD013TR データシート(PDF) 11 Page - STMicroelectronics |
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L6235PD013TR データシート(HTML) 11 Page - STMicroelectronics |
11 / 35 page DocID7618 Rev 2 11/35 L6235 Circuit description 35 5 Circuit description 5.1 Power stages and charge pump The L6235 device integrates a 3-phase bridge, which consists of 6 Power MOSFETs connected as shown in Figure 1: Block diagram on page 3. Each power MOS has an RDS(ON) = 0.3 (typical value at 25 °C) with intrinsic fast freewheeling diode. Switching patterns are generated by the PWM current controller and the hall effect sensor decoding logic (see Section 6: PWM current control on page 13 and Section 8: Decoding logic on page 18). Cross conduction protection is implemented by using a deadtime (tDT = 1 µs typical value) set by internal timing circuit between the turn off and turn on of two Power MOSFETs in one leg of a bridge. Pins VSA and VSB MUST be connected together to the supply voltage (VS). Using N-channel power MOS for the upper transistors in the bridge requires a gate drive voltage above the power supply voltage. The bootstrapped supply (VBOOT) is obtained through an internal oscillator and few external components to realize a charge pump circuit as shown in Figure 5. The oscillator output (pin VCP) is a square wave at 600 KHz (typically) with 10 V amplitude. Recommended values/part numbers for the charge pump circuit are shown in Table 6. Figure 5. Charge pump circuit Table 6. Charge pump external component values Component Value CBOOT 22 0nF CP 10 nF RP 100 D1 1N4148 D2 1N4148 D2 CBOOT D1 RP CP VS VSA VCP VBOOT VSB D01IN1328 |
同様の部品番号 - L6235PD013TR |
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同様の説明 - L6235PD013TR |
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