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IRF7380TRPBF データシート(PDF) 1 Page - International Rectifier |
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IRF7380TRPBF データシート(HTML) 1 Page - International Rectifier |
1 / 8 page HEXFET® Power MOSFET l High frequency DC-DC converters Benefits Applications l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current Notes through are on page 8 SO-8 VDSS RDS(on) max ID 80V 73m :@VGS = 10V 3.6A D1 D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 1 www.irf.com © 2013 International Rectifier September 16, 2013 IRF7380 Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 100°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current c PD @TA = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C dv/dt Peak Diode Recovery dv/dt h V/ns TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 42 °C/W RθJA Junction-to-Ambient (PCB Mount) f ––– 62.5 ± 20 2.3 2.0 -55 to + 150 0.02 Max. 3.6 2.9 29 80 |
同様の部品番号 - IRF7380TRPBF |
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同様の説明 - IRF7380TRPBF |
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