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LMH6601QMGXNOPB データシート(PDF) 7 Page - National Semiconductor (TI) |
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LMH6601QMGXNOPB データシート(HTML) 7 Page - National Semiconductor (TI) |
7 / 37 page LMH6601, LMH6601-Q1 www.ti.com SNOSAK9E – JUNE 2006 – REVISED MARCH 2013 2.7V ELECTRICAL CHARACTERISTICS Single Supply with VS = 2.7V, AV = +2, RF = 604Ω, SD tied to V +, V OUT = VS/2, RL = 150Ω to V − unless otherwise specified. Boldface limits apply at temperature extremes. (1) Symbol Parameter Condition Min (2) Typ (2) Max (2) Units Frequency Domain Response SSBW –3 dB Bandwidth Small Signal VOUT = 0.25 VPP 120 MHz SSBW_1 VOUT = 0.25 VPP, AV = +1 250 Peak Peaking VOUT = 0.25 VPP, AV = +1 3.1 dB Peak_1 Peaking VOUT = 0.25 VPP 0.1 dB LSBW –3 dB Bandwidth Large Signal VOUT = 2 V PP 73 MHz Peak_2 Peaking VOUT = 2 VPP 0 dB 0.1 dB BW 0.1 dB Bandwidth VOUT = 2VPP 30 MHz GBWP_1k Gain Bandwidth Product Unity Gain, RL = 1 kΩ to VS/2 110 MHz GBWP_150 Unity Gain, RL = 150Ω to VS/2 81 AVOL Large Signal Open Loop Gain 0.25V < VOUT < 2.5V 56 65 dB PBW Full Power BW –1 dB, AV = +4, VOUT = 2 VPP, 13 MHz RL = 150Ω to VS/2 DG Differential Gain 4.43 MHz, 0.45V ≤ VOUT ≤ 2.05V 0.12 % RL = 150Ω to V − DP Differential Phase 4.43 MHz, 0.45V ≤ VOUT ≤ 2.05V 0.62 deg RL = 150Ω to V − Time Domain Response TRS/TRL Rise & Fall Time 0.25V Step 2.7 ns OS Overshoot 0.25V Step 10 % SR Slew Rate 2V Step 260 V/ μs TS Settling Time 1V Step, ±0.1% 147 ns TS_1 1V Step, ±0.02% 410 PD Propagation Delay Input to Output, 250 mV Step, 50% 3.4 ns Distortion & Noise Performance HD2 Harmonic Distortion (2nd) 1 VPP, 10 MHz −58 dBc HD3 Harmonic Distortion (3rd) 1 VPP, 10 MHz −60 dBc VN1 Input Voltage Noise >10 MHz 8.4 nV/ √Hz VN2 1 MHz 12 IN Input Current Noise >1 MHz 50 fA/ √Hz Static, DC Performance VIO Input Offset Voltage ±1 ±3.5 mV ±6.5 DVIO Input Offset Voltage Average Drift See (3) −6.5 μV/°C IB Input Bias Current See (4) 5 50 pA IOS Input Offset Current See (4) 2 25 pA RIN Input Resistance 0V ≤ VIN ≤ 1.2V 20 T Ω CIN Input Capacitance 1.6 pF +PSRR Positive Power Supply Rejection DC 58 68 dB Ratio 53 (1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. (2) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material. (3) Drift determined by dividing the change in parameter at temperature extremes by the total temperature change. (4) This parameter is ensured by design and/or characterization and is not tested in production. Copyright © 2006–2013, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Links: LMH6601 LMH6601-Q1 |
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