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LMH6639MFNOPB データシート(PDF) 2 Page - National Semiconductor (TI) |
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LMH6639MFNOPB データシート(HTML) 2 Page - National Semiconductor (TI) |
2 / 26 page LMH6639 SNOS989G – JANUARY 2002 – REVISED MARCH 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) (2) ESD Tolerance 2KV(3) 200V(4) VIN Differential ±2.5V Input Current ±10mA Supply Voltage (V+ – V−) 13.5V Voltage at Input/Output pins V+ +0.8V, V− −0.8V Storage Temperature Range −65°C to +150°C Junction Temperature(5)(6) +150°C Soldering Information Infrared or Convection (20 sec) 235°C Wave Soldering (10 sec) 260°C (1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test conditions, see the Electrical Characteristics. (2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications. (3) Human body model, 1.5k Ω in series with 100pF. (4) Machine Model, 0 Ω in series with 200pF. (5) The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board. (6) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. Operating Ratings (1) Supply Voltage (V+ to V−) 3V to 12V Operating Temperature Range(2) −40°C to +85°C Package Thermal Resistance ( θJA) (2) SOT-23-6 265°C/W SOIC-8 190°C/W (1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test conditions, see the Electrical Characteristics. (2) The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board. 3V Electrical Characteristics Unless otherwise specified, all limits ensured for at TJ = 25°C, V + = 3V, V− = 0V, V O = VCM = V +/2, and R L = 2kΩ to V +/2. Boldface limits apply at the temperature extremes. Symbol Parameter Conditions Min(1) Typ(2) Max(1) Units BW −3dB BW AV = +1 120 170 MHz AV = −1 63 BW0.1dB 0.1dB Gain Flatness RF = 2.65kΩ , RL = 1kΩ, 16.4 MHz FPBW Full Power Bandwidth AV = +1, VOUT = 2VPP, −1dB 21 MHz V+ = 1.8V, V− = 1.2V GBW Gain Bandwidth product AV = +1 83 MHz en Input-Referred Voltage Noise RF = 33kΩ f = 10kHz 19 nV/ √Hz f = 1MHz 16 in Input-Referred Current Noise RF = 1MΩ f = 10kHz 1.30 pA/ √Hz f = 1MHz 0.36 THD Total Harmonic Distortion f = 5MHz, VO = 2VPP, AV = +2, −50 dBc RL = 1kΩ to V +/2 (1) All limits are ensured by testing or statistical analysis. (2) Typical values represent the most likely parametric norm. 2 Submit Documentation Feedback Copyright © 2002–2013, Texas Instruments Incorporated Product Folder Links: LMH6639 |
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