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2N1671A データシート(PDF) 1 Page - Digitron Semiconductors |
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2N1671A データシート(HTML) 1 Page - Digitron Semiconductors |
1 / 2 page DIGITRON SEMICONDUCTORS 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 2N1671A - C UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Symbol Value Unit Base 1 – emitter reverse voltage VB1E 30 V Base 2 – emitter reverse voltage VB2E 30 V Interbase voltage VB1B2 35 V RMS emitter current IFRMS 50 mA Emitter peak current IEM 2 A Total power dissipation Ptot 450 mW Maximum junction temperature TJ 150 °C Storage temperature range Tstg -55 to 150 °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit 2N1671 - - -12 2N1671A - - -12 Emitter reverse current IEB2O VB2E = 30V, IB1 = 0 2N1671B - - -0.2 µA 2N1671 - - 5 2N1671A - - 5 Emitter saturation voltage VEB1(sat) VB2B1 = 10V, IE = 50mA 2N1671B - - 5 V 2N1671 4.7 - 9.1 2N1671A 4.7 - 9.1 Interbase resistance RBBO VB2B1 = 3V, IE = 0 2N1671B 4.7 - 9.1 K□ 2N1671 0.47 - 0.62 2N1671A 0.47 - 0.62 Intrinsic standoff ratio η VB2B1 = 10V 2N1671B 0.47 - 0.62 - 2N1671 - - 8 2N1671A - - 8 Valley current IV VB2B1 = 10V, RB2 = 100□ 2N1671B - - 8 mA 2N1671 - - 25 2N1671A - - 25 Peak current IP VB2B1 = 25V 2N1671B - - 6 µA sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20121023 |
同様の部品番号 - 2N1671A |
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同様の説明 - 2N1671A |
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