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2SC4467G-O-T3N-T データシート(PDF) 2 Page - Unisonic Technologies |
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2SC4467G-O-T3N-T データシート(HTML) 2 Page - Unisonic Technologies |
2 / 4 page 2SC4467 NPN EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R214-018.B ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 6 V Collector Current IC 8 A Base Current IB 3 A Collector Power Dissipation (TC=25°C) PC 80 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA =25°C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Cut-Off Current ICBO VCB=160V 10 µA Emitter Cut-Off Current IEBO VEB=6V 10 µA Collector-Emitter Breakdown Voltage BVCEO IC=50mA 120 V DC Current Gain hFE VCE=4V, IC=3A 50 Collector-Emitter Saturation Voltage VCE(sat) IC=3A, IB=0.3A 1.5 V Current Gain Bandwidth Product fT VCE=12V, IE=-0.5A 20 MHz Output Capacitance Cob VCB=10V, f=1MHz 200 pF Switching time Turn-on time tON VCC=40V, RL=10Ω, IC=4A, IB1=0.4A IB2=0.4A 0.13 µS Storage time tS 3.50 µS Fall time tF 0.32 µS CLASSIFICATION OF hFE RANK O P Y RANGE 50~100 70~140 90~180 |
同様の部品番号 - 2SC4467G-O-T3N-T |
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同様の説明 - 2SC4467G-O-T3N-T |
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