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L6569 データシート(PDF) 4 Page - STMicroelectronics |
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L6569 データシート(HTML) 4 Page - STMicroelectronics |
4 / 13 page L6569 L6569A 4/13 OSCILLATOR FREQUENCY The frequency of the internal oscillator can be programmed using external resistor and capacitor. The nominal oscillator frequency can be calculated using the following equation: Where RF and CF are the external resistor and capacitor. The device can be driven in "shut down" condition keeping the CF pin close to GND, but some cares have to be taken: 1. When CF is to GND the high side driver is off and the low side is on 2. The forced discharge of the oscillator capacitor CF must not be shorter than 1us: a simple way to do this is to limit the current discharge with a resistive path imposing R · CF >1µs (see fig.1) Figure 1. VRFON 2 RF High Level Output Voltage IRF = 1mA VS -0.05 VS -0.2 V VRF OFF RF Low Level Output Voltage IRF = -1mA 50 200 mV VCFU 3 CF Upper Threshold 7.7 8 8.2 V VCFL CF Lower Threshold 3.80 4 4.3 V td Internal Dead Time 0.85 1.25 1.65 µs DC Duty Cycle, Ratio Between Dead Time + Conduction Time of High Side and Low Side Drivers 0.45 0.5 0.55 RON On resistance of Boostrap LDMOS 120 Ω VBC Boostrap Voltage before UVLO VS = 8.2 2.5 3.6 V IAVE 1 Average Current from Vs No Load, fs = 60KHz 1.2 1.5 mA fout 6 Oscillation Frequency RT = 12K; CT = 1nF 57 60 63 kHz Symbol Pin Parameter Test Condition Min. Typ. Max. Unit f OSC 1 2R F C F In2 ⋅⋅ ⋅ ----------------------------------------- 1 1.3863 R F C F ⋅⋅ ------------------------------------------ == RF CF GNDM 1 2 3 4 8 7 6 5 fault signal R ELECTRICAL CHARACTERISTCS (continued) |
同様の部品番号 - L6569 |
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同様の説明 - L6569 |
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