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2SC2625B データシート(PDF) 1 Page - Nell Semiconductor Co., Ltd |
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2SC2625B データシート(HTML) 1 Page - Nell Semiconductor Co., Ltd |
1 / 3 page 12 30 J 2S C 26 25 FEATURES High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE TO-3P package which can be installed to the heat sink APPLICATIONS SEMICONDUCTOR RoHS RoHS Silicon NPN triple diffusion planar transistor Nell High Power Products 2SC2625B (High voltage switching transistor) Switching regulator and general purpose ABSOLUTE MAXIMUM RATINGS (T = 25°C) C UNIT V PC VCEO Tstg PARAMETER Collector to emitter voltage ºC 7 10 Collector current Base current Collector power dissipation Junction temperature High-speed switching 450 400 80 3 VALUE 400 VCBO Tj -55 to 150 150 A Collector to base voltage Emitter to base voltage SYMBOL VCEO(SUS) VEBO IC IB T = 25°C C Storage temperature W with one screw 15.6±0.4 9.6 2 3 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 Φ3.2 0,1 ± 4.8±0.2 2.0±0.1 0.65 +0.2 -0.1 1.4 B C E 1 2 3 Page 1 of 3 www.nellsemi.com All dimensions in millimeters NPN C B E Ultrasonic generators High frequency inverters THERMAL CHARACTERISTICS (T = 25°C) C UNIT PARAMETER 1.55 VALUE Rth(j-c) Thermal resistance, junction to case SYMBOL ºC/W TO-3P(B) 10A/400V/80W |
同様の部品番号 - 2SC2625B |
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同様の説明 - 2SC2625B |
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