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6N10Z データシート(PDF) 2 Page - Unisonic Technologies |
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6N10Z データシート(HTML) 2 Page - Unisonic Technologies |
2 / 4 page 6N10Z Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R502-920.B ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current Continuous ID 6.5 A Pulsed IDM 8.0 A Repetitive Avalanche Energy (Duty Cycle ≤1%) L=0.1mH EAR 1.25 mJ Power Dissipation PD 16 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note : Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 100 °C/W Junction to Case θJC 7.5 °C/W Notes: θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. θJC is guaranteed by design while θJA is determined by the user’s board deign. |
同様の部品番号 - 6N10Z |
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同様の説明 - 6N10Z |
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