FQD11P06TM datasheet(4/9 Pages) FAIRCHILD

部品番号	FQD11P06TM

部品情報	P-Channel QFET짰 MOSFET -60 V, -9.4 A, 185 m廓

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4

Typical Characteristics (Continued)

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

N o te s :

※

1 . Z

θ

JC(t) = 3 . 2 8

/W M a x .

℃

2 . D u ty F a c to r, D = t

1 /t 2

3 . T

JM - T C = P DM * Z θ JC(t )

s in g le p u ls e

D= 0 .5

0.0 2

0.2

0.0 5

0.1

0.01

25

50

75

100

125

150

0

2

4

6

8

10

T

C, Case Temperature [

℃

]

10

0

10

1

10

2

10

-1

10

0

10

1

10

2

DC

10 ms

1 ms

100 µs

Operation in This Area

is Limited byR

DS(on)

※

Notes :

1. T

C = 25

oC

2. T

J = 150

oC

3. Single Pulse

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

※

Notes :

1. V

GS = -10 V

2. I

D = -4.7 A

T

J, Junction Temperature [

oC]

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

※

Notes:

1. V

GS = 0 V

2. I

D = -250 µ A

T

J, Junction Temperature [

oC]

-V

DS, Drain-Source Voltage [V]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

t

1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]

Figure 11. Transient Thermal Response Curve

t1

PDM

t2

FQD11P06 / FQU11P06 Rev. C2

同様の部品番号 - FQD11P06TM

メーカー	部品番号	データシート	部品情報
VBsemi Electronics Co.,...	FQD11P06TM	990Kb / 8P	P-Channel 60-V (D-S) MOSFET
BYCHIP ELECTRONICS CO.,...	FQD11P06TM	912Kb / 4P	P-channel Enhancement Mode Power MOSFET

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