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SIA447DJ-T1-GE3 データシート(PDF) 1 Page - Vishay Siliconix |
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SIA447DJ-T1-GE3 データシート(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Vishay Siliconix SiA447DJ New Product Document Number: 63774 S12-1141-Rev. B, 21-May-12 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For more information please contact: pmostechsupport@vishay.com P-Channel 12 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance •100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Providing low voltage drop in Smart Phones, Tablet PCs, Mobile Computing: - Battery Switches - Battery Management - Load Switches Notes: a. Package limited b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) - 12 0.0135 at VGS = - 4.5 V - 12a 31 nC 0.0194 at VGS = - 2.5 V - 12a 0.0344 at VGS = - 1.8 V - 12a 0.0710 at VGS = - 1.5 V - 3 PowerPAK SC-70-6L-Single 6 5 4 1 2 3 D D D D G S S 2.05 mm 2.05 mm Ordering Information: SiA447DJ-T4-GE3 (Lead (Pb)-free and Halogen-free) SiA447DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code X X X B R X Lot Traceability and Date code Part # code S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 12 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 12a A TC = 70 °C - 12a TA = 25 °C - 12a, b, c TA = 70 °C - 10b, c Pulsed Drain Current (t = 300 µs) IDM - 50 Continuous Source-Drain Diode Current TC = 25 °C IS - 12a TA = 25 °C - 2.9b, c Maximum Power Dissipation TC = 25 °C PD 19 W TC = 70 °C 12 TA = 25 °C 3.5b, c TA = 70 °C 2.2b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t 5 s RthJA 28 36 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 5.3 6.5 |
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