STB24NM60N datasheet(7/15 Pages) STMICROELECTRONICS

部品番号	STB24NM60N

部品情報	N-channel 600 V, 0.168, 17 A MDmesh II Power MOSFET

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STB24NM60N

Electrical characteristics

Doc ID 010008 Rev 1

7/15

Figure 8.

Capacitance variations

Figure 9.

Output capacitance stored energy

Figure 10.

Normalized gate threshold voltage

vs temperature

Figure 11.

Normalized on resistance vs

temperature

Figure 12.

Normalized BVDSS vs temperature

Figure 13.

Source-drain diode forward

characteristics

C

3100

2100

1100

100

0

40

VDS(V)

(pF)

20

4100

60

Ciss

Coss

Crss

5100

6100

AM08535v1

Eoss

1.0

0

100

VDS(V)

(µJ)

2.0

200

3.0

300

400

4.0

500

6.0

5.0

7.0

8.0

9.0

500

AM08536v1

VGS(th)

1.00

0.90

0.80

0.70

-50

0

TJ(°C)

(norm)

-25

1.10

75

25

50

100

ID = 250 µA

AM08537v1

RDS(on)

2.0

1.5

1.0

0.5

-50

0

TJ(°C)

(norm)

-25

75

25

50

100

ID= 8 A

AM08538v1

BVDSS

-50

0

TJ(°C)

(norm)

-25

75

25

50

100

0.92

0.95

0.98

1.00

1.03

1.06

ID= 1 mA

AM08539v1

VSD

0

4

ISD(A)

(V)

2

10

6

8

0.4

0.6

0.8

1.0

TJ=-50°C

TJ=150°C

TJ=25°C

0.2

1.2

1.4

0

12

AM09005v1

同様の部品番号 - STB24NM60N

メーカー	部品番号	データシート	部品情報
Inchange Semiconductor ...	STB24NM60N	314Kb / 2P	isc N-Channel MOSFET Transistor

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