STU8NM60ND datasheet(4/17 Pages) STMICROELECTRONICS

部品番号	STU8NM60ND

部品情報	N-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFET

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Electrical characteristics

STx8NM60ND

4/17

2

Electrical characteristics

(TCASE= 25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS = 0

600

V

dv/dt(1)

1.

Characteristics value at turn off on inductive load

Drain-source voltage slope

VDD = 480 V, ID = 7 A,

VGS =10 V

45

V/ns

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating,Tc = 125 °C

1

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

±100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3

4

5

V

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 3.5 A

0.59

0.70

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

gfs

(1)

1.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward transconductance

VDS = 15 V, ID= 5 A

7.5

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz, VGS = 0

560

37

4

pF

Coss eq.

(2)

2.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS = 0, VDS = 0 to 480 V

90

pF

RG

Gate input resistance

f = 1 MHz Gate DC Bias = 0

Test Signal Level = 20 mV

Open Drain

6

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 480 V, ID = 7 A

VGS = 10 V

Figure 19

22

4

13

nC

同様の部品番号 - STU8NM60ND

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