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1N5235B データシート(PDF) 1 Page - Diodes Incorporated |
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1N5235B データシート(HTML) 1 Page - Diodes Incorporated |
1 / 2 page DS18006 Rev. 14 - 2 1 of 2 1N5221B - 1N5267B 1N5221B - 1N5267B 500mW EPITAXIAL ZENER DIODE Features Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Power Dissipation (Note 1) Pd 500 mW Thermal Resistance, Junction to Ambient Air (Note 1) RqJA 300 °C/W Forward Voltage @ IF = 200mA VF 1.1 V Operating and Storage Temperature Range Tj, TSTG -65 to +200 °C · Case: DO-35, Glass · Terminals: Solderable per MIL-STD-202, Method 208 · Polarity: Cathode Band · Marking: Type Number · Weight: 0.13 grams (approx.) · 500mW Power Dissipation · High Stability · Low Noise · Surface Mount Equivalents Available · Hermetic Package · VZ - Tolerance ±5% Mechanical Data A A B C D DO-35 Dim Min Max A 25.40 ¾ B ¾ 4.00 C ¾ 0.60 D ¾ 2.00 All Dimensions in mm Notes: 1. Valid provided that leads are kept at TL £75°C with lead length = 9.5mm (3/8”) from case; derate above 75°C. |
同様の部品番号 - 1N5235B |
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同様の説明 - 1N5235B |
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