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IRF7946TRPBF データシート(PDF) 3 Page - International Rectifier |
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IRF7946TRPBF データシート(HTML) 3 Page - International Rectifier |
3 / 12 page IRF7946PbF www.irf.com 3 S D G Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 90A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.021mH RG = 50, IAS = 90A, VGS =10V. ISD 90A, di/dt 1135A/μs, VDD V(BR)DSS, TJ 150°C.
Pulse width 400μs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ approximately 90°C. This value determined from sample failure population, starting TJ = 25°C, L= 0.021mH, RG = 50, IAS = 90A, VGS =10V. Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 91 ––– ––– S Qg Total Gate Charge ––– 141 212 nC Qgs Gate-to-Source Charge ––– 36 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 44 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 97 ––– td(on) Turn-On Delay Time ––– 20 ––– ns tr Rise Time ––– 49 ––– td(off) Turn-Off Delay Time ––– 54 ––– tf Fall Time ––– 41 ––– Ciss Input Capacitance ––– 6852 ––– pF Coss Output Capacitance ––– 1046 ––– Crss Reverse Transfer Capacitance ––– 735 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 1307 ––– Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 1465 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 96 A (Body Diode) ISM Pulsed Source Current ––– ––– 793 A (Body Diode) Ãd VSD Diode Forward Voltage ––– 0.75 1.2 V dv/dt Peak Diode Recovery f ––– 1.6 ––– V/ns trr Reverse Recovery Time ––– 49 ––– ns TJ = 25°C VR = 34V, ––– 50 ––– TJ = 125°C IF = 90A Qrr Reverse Recovery Charge ––– 74 ––– nC TJ = 25°C di/dt = 100A/μs g ––– 73 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 2.6 ––– A TJ = 25°C VGS = 0V, VDS = 0V to 32V i VGS = 0V, VDS = 0V to 32V h Conditions VGS = 10V g VGS = 0V VDS = 25V ƒ = 1.0 MHz ID = 90A, VDS =0V, VGS = 10V Conditions VDS = 10V, ID = 90A VDS =20V ID = 90A TJ = 25°C, IS = 90A, VGS = 0V g integral reverse p-n junction diode. MOSFET symbol showing the TJ = 175°C, IS = 90A, VDS = 40V ID = 30A RG = 2.7 VGS = 10V g VDD = 20V |
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