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IRF7946TRPBF データシート(PDF) 3 Page - International Rectifier

部品番号 IRF7946TRPBF
部品情報  Brushed Motor drive applications
Download  12 Pages
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メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

IRF7946TRPBF データシート(HTML) 3 Page - International Rectifier

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IRF7946PbF
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3
S
D
G
Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 90A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
(Refer to AN-1140)
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by TJmax, starting TJ = 25°C, L = 0.021mH
RG = 50, IAS = 90A, VGS =10V.
„ ISD  90A, di/dt  1135A/μs, VDD V(BR)DSS, TJ  150°C.
… Pulse width  400μs; duty cycle  2%.
† Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
‡ Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
‰ Ris measured at TJ approximately 90°C.
Š This value determined from sample failure population,
starting TJ = 25°C, L= 0.021mH, RG = 50, IAS = 90A, VGS =10V.
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max. Units
gfs
Forward Transconductance
91
–––
–––
S
Qg
Total Gate Charge
–––
141
212
nC
Qgs
Gate-to-Source Charge
–––
36
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
44
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
97
–––
td(on)
Turn-On Delay Time
–––
20
–––
ns
tr
Rise Time
–––
49
–––
td(off)
Turn-Off Delay Time
–––
54
–––
tf
Fall Time
–––
41
–––
Ciss
Input Capacitance
–––
6852
–––
pF
Coss
Output Capacitance
–––
1046
–––
Crss
Reverse Transfer Capacitance
–––
735
–––
Coss eff. (ER)
Effective Output Capacitance (Energy Related)
–––
1307
–––
Coss eff. (TR)
Effective Output Capacitance (Time Related)
–––
1465
–––
Diode Characteristics
Symbol
Parameter
Min.
Typ.
Max. Units
IS
Continuous Source Current
–––
–––
96
™
A
(Body Diode)
ISM
Pulsed Source Current
–––
–––
793
A
(Body Diode)
Ãd
VSD
Diode Forward Voltage
–––
0.75
1.2
V
dv/dt
Peak Diode Recovery
f
–––
1.6
–––
V/ns
trr
Reverse Recovery Time
–––
49
–––
ns
TJ = 25°C
VR = 34V,
–––
50
–––
TJ = 125°C
IF = 90A
Qrr
Reverse Recovery Charge
–––
74
–––
nC
TJ = 25°C
di/dt = 100A/μs
g
–––
73
–––
TJ = 125°C
IRRM
Reverse Recovery Current
–––
2.6
–––
A
TJ = 25°C
VGS = 0V, VDS = 0V to 32V i
VGS = 0V, VDS = 0V to 32V h
Conditions
VGS = 10V g
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz
ID = 90A, VDS =0V, VGS = 10V
Conditions
VDS = 10V, ID = 90A
VDS =20V
ID = 90A
TJ = 25°C, IS = 90A, VGS = 0V g
integral reverse
p-n junction diode.
MOSFET symbol
showing the
TJ = 175°C, IS = 90A, VDS = 40V
ID = 30A
RG = 2.7
VGS = 10V g
VDD = 20V


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