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IRF6645 データシート(PDF) 4 Page - Vishay Siliconix |
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IRF6645 データシート(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com Document Number: 91026 4 S11-1063-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF614S, SiHF614S Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 300 250 200 150 0 50 100 100 101 VDS, Drain-to-Source Voltage (V) C iss C rss C oss V GS = 0 V, f = 1 MHz C iss = Cgs + Cgd, Cds Shorted C rss = Cgd C oss = Cds + Cgd 91026_05 QG, Total Gate Charge (nC) 20 16 12 8 0 4 0 28 6 4 I D = 2.7 A V DS = 50 V V DS = 125 V For test circuit see figure 13 V DS = 200 V 91026_06 101 100 VSD, Source-to-Drain Voltage (V) 0.5 1.3 1.1 0.9 0.7 25 °C 150 °C V GS = 0 V 91026_07 1.5 100 µs 1 ms 10 ms Operation in this area limited by R DS(on) VDS, Drain-to-Source Voltage (V) T C = 25 °C T J = 150 °C Single Pulse 102 2 5 0.1 1 2 5 10 2 5 25 110 25 102 25 103 91026_08 |
同様の部品番号 - IRF6645 |
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同様の説明 - IRF6645 |
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