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IRLML2402GTRPBF データシート(PDF) 2 Page - International Rectifier |
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IRLML2402GTRPBF データシート(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRLML2402GPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 V VGS = 0V, ID = 250µA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient 0.024 V/°C Reference to 25°C, ID = 1mA 0.25 VGS = 4.5V, ID = 0.93A 0.35 VGS = 2.7V, ID = 0.47A VGS(th) Gate Threshold Voltage 0.70 V VDS = VGS, ID = 250µA gfs Forward Transconductance 1.3 S VDS = 10V, ID = 0.47A 1.0 VDS = 16V, VGS = 0V 25 VDS = 16V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage -100 VGS = -12V Gate-to-Source Reverse Leakage 100 VGS = 12V Qg Total Gate Charge 2.6 3.9 ID = 0.93A Qgs Gate-to-Source Charge 0.41 0.62 nC VDS = 16V Qgd Gate-to-Drain ("Miller") Charge 1.1 1.7 VGS = 4.5V, See Fig. 6 and 9 td(on) Turn-On Delay Time 2.5 VDD = 10V tr Rise Time 9.5 ID = 0.93A td(off) Turn-Off Delay Time 9.7 RG = 6.2Ω tf Fall Time 4.8 RD = 11Ω, See Fig. 10 Ciss Input Capacitance 110 VGS = 0V Coss Output Capacitance 51 pF VDS = 15V Crss Reverse Transfer Capacitance 25 = 1.0MHz, See Fig. 5 Ω µA nA IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage 1.2 V TJ = 25°C, IS = 0.93A, VGS = 0V trr Reverse Recovery Time 25 38 ns TJ = 25°C, IF = 0.93A Qrr Reverse RecoveryCharge 16 24 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics A 7.4 0.54 S D G Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 0.93A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 5sec. ns |
同様の部品番号 - IRLML2402GTRPBF |
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同様の説明 - IRLML2402GTRPBF |
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