SB260E-G datasheet(1/2 Pages) COMCHIP

部品番号	SB260E-G

部品情報	Low VF/ESD Leaded Schottky Barrier Rectifiers

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メーカー	COMCHIP [Comchip Technology]

ホームページ	http://www.comchiptech.com

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Low VF/ESD Leaded Schottky Barrier Rectifiers

MDS0906003A

Page 1

SB220E-G thru SB2100E-G

Voltage Range: 20 to 100 V

Current: 2.0 A

"-G" : RoHS Device

• Case: Molded plastic body DO-15

• Epoxy: UL94-V0 rated flame retardant

• Terminals: Solderable per MIL-STD-750 Method 2026

• Polarity: Color band denotes cathode end

• Mounting Position: Any

• Weight: 0.015 ounces, 0.4 grams

• Low drop down voltage

• 2.0A operation at TA

=75°C with no thermal runaway

• For use in low voltage, high frequency invertors free

wheeling and polarity protection

• Silicon epitaxial planar chips

• Electrostatic discharge (ESD) test under IEC61

000-4-2:

standard: >15KV (air) & 8KV (contact)

• Lead-free part, meet RoHS requirements

Symbols 220E 240E 245E 250E 260E 280E 2100E Units

Maximum Recurrent Peak Reverse Voltage

VRRM

20

40

45

50

60

80

100

Volts

Maximum RMS Voltage

VRMS

14

28

30

35

42

56

70

Volts

Maximum DC Blocking Voltage

VDC

2

0

40

45

50

60

80

100

Volts

Maximum Average Forward Rectified Current

0.375” (9.5mm) lead length at TA

=75°C, See Figure 1

Peak Forward Surge Current

8.3mS single half sine-wave superimp osed on

IFSM

50

Amps

rated load (JEDEC Me thod) TL=110°C

Maximum Forward Voltage at 2.0A (Note 1)

VF

0.50

0.70

0.85

Volts

Maximum DC Reverse Current

TA

= 25°C

at Rated DC Blocking Voltage

TA

=100°C

Typical Junction Capacitance (Note 2)

CJ

170

pF

Typical Thermal Resistance (Note 3)

RθJA

50.0

RθJL

25.0

Operating Junction Temperature Range

TJ

-65 ~ +125

-65 ~ +150

°C

Storage Temperature Range

TSTG

-65 ~ +150

°C

MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified

FEATURES

MECHANICAL DATA

IAV

2.0

Amps

IR

mA

°C/W

0.5

20

10

Unit :inch(mm)

DO-15

1.0(25.4) Min.

.3 00(7 .6 )

.2 30(5 .8 )

.140(3.6)

.104(2.6)

.034(0.86)

.028(0.71)

Note 1. Pulse test: 300µS pu lse wi dth, 1% du ty cy cle

2. Me asured at 1.0MH z an d ap plied reverse vo ltage of 4.0 Volts

3. Therma l resistance from junction to am bient and from junction to lead P.C.B. mo unted 0. 375” (9.5mm ) lead length

同様の部品番号 - SB260E-G

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Pan Jit International I...	SB260E	64Kb / 2P	SCHOTTKY BARRIER RECTIFIERS
Sirectifier Global Corp...	SB260E	237Kb / 2P	Power Schottky Rectifier - 2Amp 40~100Volt
Sirectifier Global Corp...	SB260E	227Kb / 2P	Power Schottky Rectifier - 2Amp 40~100Volt
Pan Jit International I...	SB260E	59Kb / 2P	SCHOTTKY BARRIER RECTIFIERS
Comchip Technology	SB260EA-G	77Kb / 3P	ESD Leaded Schottky Barrier Rectifiers

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