SIA431DJ datasheet(3/9 Pages) VISHAY

部品番号	SIA431DJ

部品情報	P-Channel 20-V (D-S) MOSFET

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メーカー	VISHAY [Vishay Siliconix]

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Document Number: 65267

S12-1141-Rev. B, 21-May-12

www.vishay.com

3

Vishay Siliconix

SiA431DJ

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For more information please contact: pmostechsupport@vishay.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

5

10

15

20

25

30

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VDS - Drain-to-Source Voltage (V)

VGS =5 V thru 2 V

VGS =1.5 V

VGS =1 V

0.00

0.02

0.04

0.06

0.08

0.10

0

5

10

15

20

25

30

ID - DrainCurrent (A)

VGS =1.5 V

VGS =2.5 V

VGS =4.5 V

VGS =1.8V

0

2

4

6

8

010

20

30

40

ID =9.6 A

Qg - Total Gate Charge (nC)

VDS =16 V

VDS =10 V

VDS =5 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

0.0

0.3

0.6

0.9

1.2

1.5

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

TC = - 55 °C

Crss

0

500

1000

1500

2000

2500

3000

0

5

10

15

20

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

- 50

- 25

0

25

50

75

100

125

150

TJ - Junction Temperature (°C)

1.5 V, 2 A

4.5 V and 2.5 V, 6.5 A

1.8 V, 6.5 A

同様の部品番号 - SIA431DJ

メーカー	部品番号	データシート	部品情報
VBsemi Electronics Co.,...	SIA431DJ-T1-GE3	1Mb / 9P	P-Channel 20 V (D-S) MOSFET
Vishay Siliconix	SIA431DJ-T1-GE3	236Kb / 9P	P-Channel 20 V (D-S) MOSFET 01-Jan-2022
	SIA431DJ-T4-GE3	236Kb / 9P	P-Channel 20 V (D-S) MOSFET 01-Jan-2022
	SIA431DJ	236Kb / 9P	P-Channel 20 V (D-S) MOSFET 01-Jan-2022

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