Vishay Siliconix

SiA456DJ

New Product

Document Number: 68642

S-81952-Rev. B, 25-Aug-08

www.vishay.com

1

N-Channel 200-V (D-S) MOSFET

FEATURES

•

Halogen-free

•

•

SC-70 Package

- Small Footprint Area

- Low On-Resistance

APPLICATIONS

•

Boost Converter for Portable Devices

PRODUCT SUMMARY

a

200

2.6

5 nC

2.5

0.5

Marking Code

X X X

A G X

Lot Traceability

and Date code

Part # code

Ordering Information: SiA456DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

PowerPAK SC-70-6L-Single

6

5

4

1

2

3

D

D

D

D

G

S

S

2.05 mm

2.05 mm

N-Channel MOSFET

G

D

S

Notes:

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 80 °C/W.

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

200

V

Gate-Source Voltage

± 16

2.6

A

2.1

Pulsed Drain Current

2

Continuous Source-Drain Diode Current

3.6

Maximum Power Dissipation

19

W

12

Operating Junction and Storage Temperature Range

- 55 to 150

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

≤ 5 s

28

36

°C/W

Maximum Junction-to-Case (Drain)

Steady State

5.3

6.5

RoHS

COMPLIANT