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SI8511-C-IS データシート(PDF) 8 Page - List of Unclassifed Manufacturers

部品番号 SI8511-C-IS
部品情報  Si85XX UNIDIRECTIONAL AC CURRENT SENSORS
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Si85xx
8
Preliminary Rev. 0.4
Figure 1. SOIC-20 Thermal Derating Curve, Dependence of Safety Limiting Values
with Case Temperature per DIN EN 60747-5-2
Table 7. Thermal Characteristics
Parameter
Symbol
Test Condition
SOIC-20
4x4 mm
QFN
Unit
IC Junction-to-Air Thermal Resistance
JA
85
55
°C/W
Table 8. Absolute Maximum Ratings1
Parameter
Symbol
Min
Typ
Max
Units
Storage temperature
TSTG
–65
+150
°C
Ambient temperature under bias
TA
–40
+125
°C
Junction Temperature
TJ
150
°C
Supply voltage
VDD
5.75
V
Voltage on any pin with respect to ground
(not including IIN, IOUT)
VIN
–0.5
VDD + 0.5
V
Output Current Drive
LO
——
10
mA
Lead solder temperature (10 s)
260
ºC
Maximum Input Current Rate of Change
1000
A/µs
Maximum Peak AC Input Current Limit
200
A
Thermal Limit (DC Current)2
30
A
Maximum Isolation Voltage (QFN)
1400
VRMS
Maximum Isolation Voltage (SOIC-20)
6000
VRMS
ESD (CDM)
JEDEC (JESD22-C101C)
–1.5
+1.5
kV
ESD (HBM)
JEDEC (JESD22-A114E)
–2500
+2500
V
ESD (MM)
JEDEC (JESD22-A115A)
–250
+ 250
V
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to conditions as specified in the operational sections of this data sheet. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2. Refer to “AN329: Extending the Full-Scale Range of the Si85xx” for more information.
0200
150
100
50
40
20
0
Case Temperature (ºC)
10
30
VDD = 5.5 V
IIN to IOUT = 20 Amps


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