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CAT24C256XI データシート(PDF) 2 Page - ON Semiconductor

部品番号 CAT24C256XI
部品情報  256 kb I2C CMOS Serial EEPROM
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
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CAT24C256XI データシート(HTML) 2 Page - ON Semiconductor

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CAT24C256
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Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Storage Temperature
–65 to +150
°C
Voltage on any Pin with Respect to Ground (Note 1)
–0.5 to +6.5
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter
Min
Units
NEND (Notes 3, 4)
Endurance
1,000,000
Program/Erase Cycles
TDR
Data Retention
100
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Page Mode, VCC = 5 V, 25°C.
4. The new product revision (E) uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when
a single byte has to be written, 4 bytes (including the ECC bits) are re−programmed. It is recommended to write by multiple of 4 bytes in order
to benefit from the maximum number of write cycles.
Table 3. D.C. OPERATING CHARACTERISTICS − Mature Product (Rev D)
(VCC = 2.5 V to 5.5 V, TA = −40°C to +125°C, and VCC = 1.8 V to 5.5 V, TA = −40°C to +85°C, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
Max
Units
ICCR
Read Current
Read, fSCL = 400 kHz
1
mA
ICC
Write Current
Write, fSCL = 400 kHz
3
mA
ISB
Standby Current
All I/O Pins at GND or VCC
TA = −40°C to +85°C
1
mA
TA = −40°C to +125°C
2
IL
I/O Pin Leakage
Pin at GND or VCC
TA = −40°C to +85°C
1
mA
TA = −40°C to +125°C
2
VIL
Input Low Voltage
−0.5
VCC x 0.3
V
VIH
Input High Voltage
VCC x 0.7
VCC + 0.5
V
VOL1
Output Low Voltage
VCC ≥ 2.5 V, IOL = 3.0 mA
0.4
V
VOL2
Output Low Voltage
VCC < 2.5 V, IOL = 1.0 mA
0.2
V
Table 4. PIN IMPEDANCE CHARACTERISTICS − Mature Product (Rev D)
(VCC = 2.5 V to 5.5 V, TA = −40°C to +125°C, and VCC = 1.8 V to 5.5 V, TA = −40°C to +85°C, unless otherwise specified.)
Symbol
Parameter
Conditions
Max
Units
CIN (Note 5)
SDA I/O Pin Capacitance
VIN = 0 V
8
pF
CIN (Note 5)
Input Capacitance (other pins)
VIN = 0 V
6
pF
IWP (Note 6)
WP Input Current
VIN < VIH, VCC = 5.5 V
130
mA
VIN < VIH, VCC = 3.3 V
120
VIN < VIH, VCC = 1.8 V
80
VIN > VIH
1
5. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
6. When not driven, the WP pin is pulled down to GND internally. For improved noise immunity, the internal pull−down is relatively strong;
therefore the external driver must be able to supply the pull−down current when attempting to drive the input HIGH. To conserve power, as
the input level exceeds the trip point of the CMOS input buffer (~ 0.5 x VCC), the strong pull−down reverts to a weak current source. The
variable WP input impedance is available only for Die Rev. C and higher.


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