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SI1023CX データシート(PDF) 2 Page - Vishay Siliconix

部品番号 SI1023CX
部品情報  Dual P-Channel 20 V (D-S) MOSFET
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メーカー  VISHAY [Vishay Siliconix]
ホームページ  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

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Document Number: 63303
S11-1384-Rev. A, 11-Jul-11
Vishay Siliconix
Si1023CX
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 20
V
VDS Temperature Coefficient
V
DS/TJ
ID = - 250 µA
- 12
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
1.8
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.4
- 1
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 30
µA
VDS = 0 V, VGS = ± 4.5 V
± 1
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
- 1
VDS = - 20 V, VGS = 0 V, TJ = 85 °C
- 10
On-State Drain Currenta
ID(on)
VDS =  5 V, VGS = - 4.5 V
- 1.5
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 4.5 V, ID = - 0.35 A
0.630
0.756
VGS = - 2.5 V, ID = - 0.35 A
0.865
1.038
VGS = - 1.8 V, ID = - 0.1 A
1.20
1.44
VGS = - 1.5 V, ID = - 0.05 A
1.6
2.4
Forward Transconductance
gfs
VDS = - 10 V, ID = - 0.4 A
1S
Dynamicb
Input Capacitance
Ciss
VDS = - 10 V, VGS = 0 V, f = 1 MHz
45
pF
Output Capacitance
Coss
15
Reverse Transfer Capacitance
Crss
10
Total Gate Charge
Qg
VDS = - 10 V, VGS = - 4.5 V, ID = - 0.4 A
1.65
2.50
nC
VDS = - 10 V, VGS = - 2.5 V, ID = - 0.4 A
12
Gate-Source Charge
Qgs
0.2
Gate-Drain Charge
Qgd
0.26
Gate Resistance
Rg
f = 1 MHz
2.4
12
24
Turn-On Delay Time
td(on)
VDD = - 10 V, RL = 33.3 
ID  - 0.3 A, VGEN = - 4.5 V, Rg = 1 
918
ns
Rise Time
tr
10
20
Turn-Off DelayTime
td(off)
10
20
Fall Time
tf
816
Turn-On Delay Time
td(on)
VDD = - 10 V, RL = 33.3 
ID  - 0.3 A, VGEN = - 8 V, Rg = 1 
12
Rise Time
tr
816
Turn-Off DelayTime
td(off)
918
Fall Time
tf
510
Drain-Source Body Diode Characteristics
Pulse Diode Forward Currenta
ISM
- 1.5
A
Body Diode Voltage
VSD
IS = - 0.3 A
- 0.8
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 0.3 A, dI/dt = 100 A/µs
16
24
ns
Body Diode Reverse Recovery Charge
Qrr
816
nC
Reverse Recovery Fall Time
ta
11
ns
Reverse Recovery Rise Time
tb
5


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