SI1023CX datasheet(4/8 Pages) VISHAY

部品番号	SI1023CX

部品情報	Dual P-Channel 20 V (D-S) MOSFET

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Document Number: 63303

S11-1384-Rev. A, 11-Jul-11

Vishay Siliconix

Si1023CX

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Gate Charge

Source-Drain Diode Forward Voltage

Threshold Voltage

0

2

4

6

8

0

0.45

0.9

1.35

1.8

Q

g - Total Gate Charge (nC)

V

DS = 16 V

V

DS = 10 V

I

D = 0.4 A

V

DS = 5 V

0.1

1

10

0.0

0.3

0.6

0.9

1.2

1.5

V

SD - Source-to-Drain Voltage (V)

T

J = 25 °C

T

J = 150 °C

0.3

0.4

0.5

0.6

0.7

- 50

- 25

0

25

50

75

100

125

150

T

J -Temperature (°C)

ID = 250 μA

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.7

0.9

1.1

1.3

1.5

- 50

- 25

0

25

50

75

100

125

150

T

J - Junction Temperature (°C)

I

D = 0.35 A

V

GS = 4.5 V

V

GS = 2.5 V

0.4

0.6

0.8

1.0

1.2

12345678

V

GS - Gate-to-Source Voltage (V)

T

J = 125 °C

I

D = 0.35 A

T

J = 25 °C

0

0.45

0.9

1.35

1.8

2.25

2.7

0.01

0.1

1

10

100

Time (s)

同様の部品番号 - SI1023CX

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI1023CX	182Kb / 8P	Dual P-Channel 20 V (D-S) MOSFET 09-Jul-2021
Vishay Siliconix	SI1023CX	182Kb / 8P	Dual P-Channel 20 V (D-S) MOSFET 09-Jul-2021

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同様の説明 - SI1023CX

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