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NE24283B データシート(PDF) 1 Page - California Eastern Labs |
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NE24283B データシート(HTML) 1 Page - California Eastern Labs |
1 / 4 page 1 10 20 30 1.4 1.2 1 0.8 0.6 0.4 0.2 0 24 21 18 15 12 9 6 3 GA NF FEATURES • VERY LOW NOISE FIGURE: 0.6 dB TYP at 12 GHz • HIGH ASSOCIATED GAIN: 11.0 dB TYP at 12 GHz • GATE LENGTH: 0.25 µm • GATE WIDTH: 200 µm • HERMETIC METAL/CERAMIC PACKAGE NE24283B ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED) NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA Frequency, f (GHz) DESCRIPTION The NE24283B is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in a solder sealed hermetic, metal ceramic package for high reliability in space applications. NEC's stringent quality assurance and test procedures as- sure the highest reliability and performance. PART NUMBER NE24283B PACKAGE OUTLINE 83B SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX NFOPT1 Optimum Noise Figure at VDS = 2 V, IDS = 10 mA f = 4 GHz dB 0.35 f = 12 GHz dB 0.6 0.7 GA1 Associated Gain at VDS = 2 V, IDS = 10 mA f = 4 GHz dB 16.0 f = 12 GHz dB 10.0 11.0 P1dB Output Power at 1 dB Gain Compression Point, f = 12 GHz VDS = 2 V, IDS = 10 mA dBm 9.5 VDS = 2 V, IDS = 20 mA dBm 11.0 G1dB Gain at P1dB, f = 12 GHz VDS = 2 V, IDS = 10 mA dB 11.8 VDS = 2 V, IDS = 20 mA dB 12.8 IDSS Saturated Drain Current at VDS = 2 V, VGS = 0 V mA 15 40 70 VP Pinch-off Voltage at VDS = 2 V, IDS = 100 µA V -2.0 -0.8 -0.2 gm Transconductance at VDS = 2 V, IDS = 10 mA mS 45 60 IGSO Gate to Source Leakage Current at VGS = -3 V µA 0.5 10 RTH (CH-A) Thermal Resistance (Channel-to-Ambient) °C/W 750 RTH (CH-C) Thermal Resistance (Channel-to-Case) °C/W 350 Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established of the production line as a "go-no-go" screening tuned for the "generic" type but not for each specimen. ELECTRICAL CHARACTERISTICS (TA = 25°C) California Eastern Laboratories |
同様の部品番号 - NE24283B |
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同様の説明 - NE24283B |
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