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L6747C データシート(PDF) 11 Page - STMicroelectronics

部品番号 L6747C
部品情報  High current MOSFET driver
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L6747C データシート(HTML) 11 Page - STMicroelectronics

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L6747C
Device description and operation
Doc ID 17127 Rev 1
11/15
MOSFET to reach the driving voltage (PVCC for HS and VCC for LS). This capacitor is
charged and discharged at the driver switching frequency FSW.
The total power PSW is dissipated among the resistive components distributed along the
driving path. According to the external gate resistance and the power MOSFET intrinsic
gate resistance, the driver dissipates only a portion of PSW as follows:
The total power dissipated from the driver can then be determined as follows:
Figure 6.
Equivalent circuit for a MOSFET driver
4.5
Layout guidelines
L6747C provides driving capability to implement high-current step-down DC-DC converters.
The first priority when placing components for these applications should be given to the
power section, minimizing the length of each connection and loop as much as possible. To
minimize noise and voltage spikes (as well as EMI and losses) power connections must be
part of a power plane, and in any case constructed with wide and thick copper traces. The
loop must be minimized. The critical components, such as the power MOSFETs, must be
close to each other. However, some space between the power MOSFETs is required to
assure good thermal cooling and airflow.
Traces between the driver and the MOSFETS should be short and wide to minimize the
inductance of the trace, which in turn minimizes ringing in the driving signals. Moreover, the
VIA count should be minimized to reduce the related parasitic effect.
The use of a multi-layer printed circuit board is recommended.
Small signal components and connections to critical nodes of the application, as well as
bypass capacitors for the device supply, are also important. Place the bypass capacitor
P
SW
HS
1
2
--- C
GHS
PVCC
2
Fsw
R
hiHS
R
hiHS
R
GateHS
R
iHS
++
----------------------------------------------------------------
R
loHS
R
loHS
R
GateHS
R
iHS
++
----------------------------------------------------------------
+
⎝⎠
⎛⎞
⋅⋅
=
P
SW
LS
1
2
--- C
GLS
VCC
2
Fsw
R
hiLS
R
hiLS
R
GateLS
R
iLS
++
--------------------------------------------------------------
R
loLS
R
loLS
R
GateLS
R
iLS
++
--------------------------------------------------------------
+
⎝⎠
⎛⎞
⋅⋅
=
PP
DC
P
SW
HS
P
SW
LS
++
=
RGATELS
RILS
CGLS
VCC
LS DRIVER
LS MOSFET
GND
LGATE
RGATEHS
RIHS
CGHS
BOOT
HS DRIVER
HS MOSFET
PHASE
HGATE
VCC


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