2N4119A datasheet(2/6 Pages) VISHAY

部品番号	2N4119A

部品情報	N-Channel JFETs

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2N/PN/SST4117A Series

Vishay Siliconix

www.vishay.com

2

Document Number: 70239

S-41231—Rev. G, 28-Jun-04

ABSOLUTE MAXIMUM RATINGS

Gate-Source/Gate-Drain Voltage

−40V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Forward Gate Current

50 mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature :

(2N Prefix)

−65 to 175_C

. . . . . . . . . . . . . . . . . . .

(PN, SST Prefix)

−55 to 150_C

. . . . . . . . . . . . .

Operating Junction Temperature :

(2N Prefix)

−55 to 175_C

. . . . . . . . . . . . . . . . . . .

(PN, SST Prefix)

−55 to 150_C

. . . . . . . . . . . . .

Lead Temperature (1/16” from case for 10 sec.)

300_C

. . . . . . . . . . . . . . . . . . .

Power Dissipation (case 25_C) :

(2N Prefix)a

300 mW

. . . . . . . . . . . . . . . . . . . . . .

(PN, SST Prefix)b

350 mW

. . . . . . . . . . . . . . . .

Notes

a.

Derate 2 mW/_C above 25_C

b.

Derate 2.8 mW/_C above 25_C

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

4117

4118

4119

Parameter

Symbol

Test Conditions

Typa

Min

Max

Min

Max

Min

Max

Unit

Static

Gate-Source

Breakdown Voltage

V(BR)GSS

IG = −1 mA , VDS = 0 V

−70

−40

−

40

−40

V

Gate-Source Cutoff Voltage

VGS(off)

VDS = 10 V, ID = 1 nA

−0.6

−1.8

−1

−3

−2

−6

V

Saturation Drain Current

IDSS

VDS = 10 V, VGS = 0 V

30

90

80

240

200

600

mA

VGS = −20 V

VDS = 0 V

−0.2

−1

pA

Gt R

C

t

I

VGS = −20 V

VDS = 0 V

TA = 150_C

2N

−0.4

−2.5

nA

Gate Reverse Current

IGSS

VGS = −10 V

PN

−0.2

−1

pA

VGS = −10 V

VDS = 0 V

SST

−0.2

−10

pA

VGS = −10 V

VDS = 0 V

TA = 100_C

PN/SST

−0.03

−2.5

nA

Gate Operating Currentb

IG

VDG = 15 V, ID = 30 mA

−0.2

pA

Drain Cutoff Currentb

ID(off)

VDS = 10 V, VGS = −8 V

0.2

pA

Gate-Source Forward Voltageb

VGS(F)

IG = 1 mA , VDS = 0 V

0.7

V

Dynamic

Common-Source

Forward Transconductance

gfs

VDS = 10 V, VGS = 0 V

70

210

80

250

100

330

mS

Common-Source

Output Conductance

gos

VDS = 10 V, VGS = 0 V

f = 1 kHz

3

5

10

mS

Common-Source

Ci

2N/PN

1.2

3

Common-Source

Input Capacitance

Ciss

VDS = 10 V

VGS = 0 V

SST

1.2

pF

Common-Source

C

VGS = 0 V

f = 1 MHz

2N/PN

0.3

1.5

pF

Common-Source

Reverse Transfer Capacitance

Crss

f = 1 MHz

SST

0.3

Equivalent Input Noise Voltageb

en

VDS = 10 V, VGS = 0 V

f = 1 kHz

15

nV⁄

√Hz

Notes

a.

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

NT

b.

This parameter not registered with JEDEC.

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