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MJE801 データシート(PDF) 1 Page - Savantic, Inc. |
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MJE801 データシート(HTML) 1 Page - Savantic, Inc. |
1 / 3 page SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE800/801/802/803 DESCRIPTION ··With TO-126 package ·Complement to type MJE700/701/702/703 ·High DC current gain ·DARLINGTON APPLICATIONS ·Designed for general–purpose amplifier and low–speed switching applications PINNING (see Fig.2) PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT MJE800/801 60 VCBO Collector-base voltage MJE802/803 Open emitter 80 V MJE800/801 60 VCEO Collector-emitter voltage MJE802/803 Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 4 A IB Base current 0.1 A PC Collector power dissipation TC=25 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 |
同様の部品番号 - MJE801 |
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同様の説明 - MJE801 |
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