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IRF630S データシート(PDF) 1 Page - Vishay Siliconix |
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IRF630S データシート(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Document Number: 91032 www.vishay.com S11-1047-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET IRF630S, SiHF630S Vishay Siliconix FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated •Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. Note a. See device orientation. PRODUCT SUMMARY VDS (V) 200 RDS(on) ()VGS = 10 V 0.40 Qg (Max.) (nC) 43 Qgs (nC) 7.0 Qgd (nC) 23 Configuration Single N-Channel MOSFET G D S K D2PAK (TO-263) S D G ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHF630S-GE3 SiHF630STRL-GE3a SiHF630STRR-GE3a Lead (Pb)-free IRF630SPbF IRF630STRLPbFa IRF630STRRPbFa SiHF630S-E3 SiHF630STL-E3a SiHF630STR-E3a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 9.0 A TC = 100 °C 5.7 Pulsed Drain Currenta IDM 36 Linear Derating Factor 0.59 W/°C Linear Derating Factor (PCB Mount)e 0.025 Single Pulse Avalanche Energyb EAS 250 mJ Repetitive Avalanche Currenta IAR 9.0 A Repetitive Avalanche Energya EAR 7.4 mJ Maximum Power Dissipation TC = 25 °C PD 74 W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 3.0 * Pb containing terminations are not RoHS compliant, exemptions may apply Peak Diode Recovery dV/dtc dV/dt 5.0 V/ns |
同様の部品番号 - IRF630S |
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同様の説明 - IRF630S |
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