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BFX34 データシート(PDF) 1 Page - Continental Device India Limited |
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BFX34 データシート(HTML) 1 Page - Continental Device India Limited |
1 / 2 page NPN SILICON EPITAXIAL TRANSISTOR BFX34 TO-39 NPN Transistor in a TO-39 Metal Envelope Primarily Intended For Use As High-Current Switching Device, e.g. Inverters And Switching Regulators. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 120 V Collector -Emitter Voltage VCEO 60 V Emitter Base Voltage VEBO 6.0 V Collector Current (d.c) IC 2.0 A Collector Current (peak-value) ICM 5.0 A Base Current (d.c) IB 1.0 A Power Dissipation up to Tcase=25 deg C Ptot 5.0 W up to Tamb=25 deg C Ptot 0.87 W Junction and Storage Temperature Range Tj,Tstg -55 to +200 deg C THERMAL RESISTANCE Junction to Ambient Rth (j-a) 200 K/W Junction to Case Rth (j-c) 35 K/W ELECTRICAL CHARACTERISTICS (TA=25 deg C unless otherwise specified) SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector Cut off Current ICES VCE=60V, VEB=0 - - 10 uA Emitter Cut off Current IEBO VEB=4V, IC=0 - - 10 uA Collector Emitter Saturation Voltage VCE(Sat) IC=5A, IB=0.5A - - 1.0 V Base Emitter Saturation Voltage VBE(Sat) IC=5A, IB=0.5A - - 1.8 V DC Current Gain hFE IC=1A, VCE=2V - 30 - IC=1.5A, VCE=0.6V - 60 - IC=2A, VCE=2V 40 - 150 Collector Capacitance Cc VCB=10V, IE=Ie=0 - 36 - pF f=1MHz Emitter Capacitance Ce VEB=0.5V, IC=Ic=0 - 440 - pF f=1MHz Transition Frequency ft IC=0.5A, VCE=5V 70 - - MHz f=35MHz Turn on Time When Switched From ton VBE=2V to IC=5V, - - 0.60 us IB=0.5A With IBM= 0,5A Turn on Time When Switched From toff IC=5A, IB=0.5A, to - - - 1.2 us VBE=2V with -IBM =0.5A Continental Device India Limited Data Sheet Page 1 of 2 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
同様の部品番号 - BFX34 |
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同様の説明 - BFX34 |
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