BD236PNP datasheet(1/4 Pages) CDIL

部品番号	BD236PNP

部品情報	EPITAXIAL SILICON POWER TRANSISTORS

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メーカー	CDIL [Continental Device India Limited]

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EPITAXIAL SILICON POWER TRANSISTORS

BD233

BD234

BD235

BD236

BD237

BD238

NPN

PNP

TO126

Plastic Package

Intended for use in Medium Power Linear Switching Applications

ABSOLUTE MAXIMUM RATINGS

BD233

BD235

BD234

BD236

Collector Base Voltage

VCBO

45

60

V

Collector Emitter Voltage

VCEO

45

60

V

Collector Emitter Voltage (RBE=1KΩ

Ω)

VCER

45

60

V

Emitter Base Voltage

VEBO

5.0

V

Collector Current

IC

2.0

A

Collector Peak Current

ICM

6.0

A

Total Dissipation @ TC=25ºC

PD

25

W

Total Dissipation @ Ta=25ºC

PD

1.25

W

Derate above 25ºC

10

mW/ ºC

Operating and Storage Junction

Temperature Range

Tj, Tstg

ºC

THERMAL CHARACTERISTICS

Junction to Case

Rth (j-c)

5.0

ºC/W

Junction to Ambient in free air

Rth (j-a)

100

ºC/W

ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Cut off Current

ICBO

VCB=45V, IE=0

BD233/234

100

µA

VCB=60V, IE=0

BD235/236

100

µA

VCB=100V, IE=0

BD237/238

100

µA

TC = 150ºC

VCB=45V, IE=0

BD233/234

2.0

mA

VCB=60V, IE=0

BD235/236

2.0

mA

VCB=100V, IE=0

BD237/238

2.0

mA

Emitter Cut off Current

IEBO

VEB=5V, IC=0

1.0

mA

Collector Emitter Sustaining Voltage

*VCEO (sus)

IC=0.1A, IB=0 BD233/234

45

V

BD235/236

60

V

BD237/238

80

V

Collector Emitter Saturation Voltage

*VCE (sat)

IC=1.0A, IB=0.1A

0.6

V

Base Emitter Voltage

*VBE (on)

IC=1.0A, VCE=2V

1.3

V

- 65 to +150

100

80

100

BD238

UNIT

DESCRIPTION

SYMBOL

BD237

B

C

E

Continental Device India Limited

Data Sheet

Page 1 of 4

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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