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BCW69 データシート(PDF) 1 Page - Continental Device India Limited

部品番号. BCW69
部品情報  SILICON PLANAR EPITAXIAL TRANSISTORS
ダウンロード  4 Pages
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メーカー  CDIL [Continental Device India Limited]
ホームページ  http://www.cdilsemi.com
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BCW69 Datasheet(HTML) 1 Page - Continental Device India Limited

   
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Continental Device India Limited
Data Sheet
Page 1 of 4
BCW69
BCW70
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistors
Marking
BCW69 = H1
BCW70 = H2
ABSOLUTE MAXIMUM RATINGS
BCW69
BCW70
D.C. current gain at Tj = 25 °C
>
120
215
–IC = 2 mA; –VCE = 5 V
hFE
<
260
500
Collector–base voltage (open emitter)
–VCB0 max.
50
V
Collector–emitter voltage (open base)
–VCE0 max.
45
V
Collector current (peak value)
–ICM max.
200
mA
Total power dissipation up to Tamb = 25 °C
Ptot
max.
250
mW
Junction temperature
Tj
max.
150
° C
Transition frequency at f = 35 MHz
–IC = 10 mA; –VCE = 5 V
fT
typ.
150
MHz
Noise figure at RS = 2 kΩ
–IC = 200 µA; –VCE = 5 V;
f = 1 kHz; B = 200 Hz
F
<
10
dB
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
2
1
SOT-23 Formed SMD Package
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company


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