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SM1212E433 データシート(PDF) 8 Page - Semtech Corporation |
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SM1212E433 データシート(HTML) 8 Page - Semtech Corporation |
8 / 77 page SX1212 ADVANCED COMMUNICATIONS & SENSING Rev 2 – June 18th, 2009 Page 8 of 77 www.semtech.com 2. Electrical Characteristics 2.1. ESD Notice The SX1212 is a high performance radio frequency device. It satisfies: • Class 2 of the JEDEC standard JESD22-A114-B (Human Body Model), except on pins 3-4-5-27-28-29-31 where it satisfies Class 1A. • Class III of the JEDEC standard JESD22-C101C (Charged Device Model) on all pins. It should thus be handled with all the necessary ESD precautions to avoid any permanent damage. 2.2. Absolute Maximum Ratings Stresses above the values listed below may cause permanent device failure. Exposure to absolute maximum ratings for extended periods may affect device reliability. Table 3: Absolute Maximum Ratings Symbol Description Min Max Unit VDDmr Supply voltage -0.3 3.7 V Tmr Storage temperature -55 125 °C Pmr Input level - 0 dBm 2.3. Operating Range Table 4: Operating Range Symbol Description Min Max Unit VDDop Supply Voltage 2.1 3.6 V Trop Temperature -40 +85 °C ML Input Level - 0 dBm 2.4. Chip Specification Conditions: Temp = 25 °C, VDD = 3.3 V, crystal frequency = 12.8 MHz, carrier frequency = 434 MHz, modulation FSK, data rate = 25 kb/s, Fdev = 50 kHz, fc = 100 kHz, unless otherwise specified. 2.4.1. Power Consumption Table 5: Power Consumption Specification Symbol Description Conditions Min Typ Max Unit IDDSL Supply current in sleep mode - 0.1 2 µA IDDST Supply current in standby mode, CLKOUT disabled Crystal oscillator running - 65 85 µA IDDFS Supply current in FS mode Frequency synthesizer running - 1.3 1.7 mA IDDR Supply current in receiver mode - 3.0 3.5 mA IDDT Supply current in transmitter mode Output power = +10 dBm Output power = 1dBm (1) - - 25 16 30 21 mA mA (1) Guaranteed by design and characterization |
同様の部品番号 - SM1212E433 |
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同様の説明 - SM1212E433 |
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