TPD1E6B06_14 datasheet(2/13 Pages) TI1

部品番号	TPD1E6B06

部品情報	Single Channel ESD Protection Device in 0201 Package

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TPD1E6B06

SLLSEB2C – FEBRUARY 2012 – REVISED FEBRUARY 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ABSOLUTE MAXIMUM RATINGS

MIN

MAX

UNIT

Operating temperature range

-40

125

°C

Storage temperature

–65

155

°C

IEC 61000-4-2 contact ESD

±15

kV

IEC 61000-4-2 air-gap ESD

±15

kV

IPP

Peak pulse current (tp = 8/20

μs)

3.8

A

PPP

Peak pulse power (tp = 8/20

μs)

50

W

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

VRWM

Reverse stand-off voltage

ILEAK = 100 nA

±5

V

ILEAK

Leakage Current

Pin 1 = 5 V, Pin 2 = 0 V

100

nA

IPP = 1 A, tp = 8/20 μs

10

Clamp voltage with ESD strike on pin 1, pin 2

VClamp1,2

V

grounded.

IPP = 5 A, tp = 8/20 μs

14

IPP = 1 A, tp = 8/20 μs

10

Clamp voltage with ESD strike on pin 2, pin 1

VClamp2,1

V

grounded.

IPP = 5 A, tp = 8/20 μs

14

Pin 1 to Pin 2(1)

0.55

RDYN

Dynamic resistance

Ω

Pin 2 to Pin 1(1)

0.55

CIO

IO capacitance

VIO = 2.5 V

6

pF

VBR1,2

Break-down voltage, pin 1 to pin 2

IIO = 1 mA

6

V

VBR2,1

Break-down voltage, pin 2 to pin 1

IIO = 1 mA

6

V

(1)

Extraction of RDYN using least squares fit of TLP characteristics between IPP = 10A and IPP = 20A.

2

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