2SK2857 datasheet(2/8 Pages) NEC

部品番号	2SK2857

部品情報	N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

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Data Sheet D11648EJ2V0DS00

2

2SK2857

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Drain Cut-off Current

IDSS

VDS = 60 V, VGS = 0 V

10

µA

Gate Leakage Current

IGSS

VGS = ±20 V, VDS = 0 V

±10

µA

Gate Cut-off Voltage

VGS(off)

VDS = 10 V, ID = 1 mA

1.0

1.4

2.0

V

Forward Transfer Admittance

| yfs |

VDS = 10 V, ID = 2 A

1

S

RDS(on)1

VGS = 4 V, ID = 1.5 A

150

220

m

Ω

Drain to Source On-state Resistance

RDS(on)2

VGS = 10 V, ID = 2.5 A

110

150

m

Ω

Input Capacitance

Ciss

265

pF

Output Capacitance

Coss

125

pF

Reverse Transfer Capacitance

Crss

VDS = 10 V

VGS = 0 V

f = 1 MHz

56

pF

Turn-on Delay Time

td(on)

8ns

Rise Time

tr

11

ns

Turn-off Delay Time

td(off)

52

ns

Fall Time

tf

VDD = 25 V, ID = 1 A

VGS(on) = 10 V, RG = 10

Ω

RL = 25

Ω

22

ns

Total Gate Charge

QG

10.6

nC

Gate to Source Charge

QGS

0.7

nC

Gate to Drain Charge

QGD

VDS = 48 V

VGS = 10 V

ID = 4 A

3.5

nC

Diode Forward Voltage

VF(S-D)

IF = 4 A, VGS = 0 V

0.86

V

Reverse Recovery Time

trr

49

ns

Reverse Recovery Charge

Qrr

IF = 4 A, VGS = 0 V

di/dt = 50 A /

µs

26.6

nC

TEST CIRCUIT 1 SWITCHING TIME

TEST CIRCUIT 2 GATE CHARGE

PG.

RG

0

VGS

D.U.T.

RL

VDD

τ = 1 s

µ

Duty Cycle

≤ 1 %

VGS

Wave Form

ID

Wave Form

VGS

10 %

90 %

VGS(on)

10 %

0

ID

90 %

td(on)

tr

td(off)

tf

10 %

τ

RG = 10

Ω

ID

0

ton

toff

PG.

50

Ω

D.U.T.

RL

VDD

IG = 2 mA

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Renesas Technology Corp	2SK2857C	196Kb / 8P	N-CHANNEL MOSFET FOR SWITCHING

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