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2SK2983-ZJ データシート(PDF) 1 Page - NEC |
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2SK2983-ZJ データシート(HTML) 1 Page - NEC |
1 / 8 page The information in this document is subject to change without notice. © 1998 MOS FIELD EFFECT TRANSISTOR 2SK2983 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Document No. D12357EJ1V0DS00 (1st edition) Date Published October 1998 NS CP (K) Printed in Japan DATA SHEET DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-resistance RDS(on)1 = 20 m Ω (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 27 m Ω (MAX.) (VGS = 4.5 V, ID = 15 A) • Low Ciss Ciss = 1200 pF TYP. • Built-in gate protection diode ORDERING INFOMATION PART NUMBER PACKAGE 2SK2983 TO-220AB 2SK2983-S TO-262 2SK2983-ZJ TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Note1 VDSS 30 V Gate to Source Voltage Note2 VGSS ±20 V Drain Current (DC) ID(DC) ±30 A Drain Current (pulse) Note3 ID(pulse) ±120 A Total Power Dissipation (TA = 25°C) PT 1.5 W Total Power Dissipation (TC = 25°C) PT 50 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Notes1. VGS = 0 V 2. VDS = 0 V 3. PW ≤ 10 µ s, Duty Cycle ≤ 1 % . |
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同様の説明 - 2SK2983-ZJ |
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