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2SK3057 データシート(PDF) 1 Page - NEC |
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2SK3057 データシート(HTML) 1 Page - NEC |
1 / 8 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. © 1998 MOS FIELD EFFECT TRANSISTOR 2SK3057 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET Document No. D13096EJ1V0DS00 (1st edition) Date Published March 1999 NS CP(K) Printed in Japan DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-state resistance RDS(on)1 = 17 m Ω MAX. (VGS = 10 V, ID = 23 A) RDS(on)2 = 27 m Ω MAX. (VGS = 4 V, ID = 23 A) • Low Ciss: Ciss = 2100 pF TYP. • Built-in gate protection diode • Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS(AC) ±20 V Gate to Source Voltage VGSS(DC) +20, –10 V Drain Current (DC) ID(DC) ±45 A Drain Current (pulse) Note1 ID(pulse) ±150 A Total Power Dissipation (Tc = 25°C) PT 30 W Total Power Dissipation (Ta = 25°C) PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 22.5 A Single Avalanche Energy Note2 EAS 50.6 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V→0 THERMAL RESISTANCE Channel to Case Rth(ch-c) 4.17 °C/W Channel to Ambient Rth(ch-a) 62.5 °C/W ORDERING INFORMATION PART NUMBER PACKAGE 2SK3057 Isolated TO-220 |
同様の部品番号 - 2SK3057 |
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同様の説明 - 2SK3057 |
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