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STF11N65M5 データシート(PDF) 5 Page - STMicroelectronics |
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STF11N65M5 データシート(HTML) 5 Page - STMicroelectronics |
5 / 25 page STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 Electrical characteristics Doc ID 022864 Rev 2 5/25 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(v) tr(v) tf(i) tc(off) Voltage delay time Voltage rise time Current fall time Crossing time VDD = 400 V, ID = 7.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 21 and Figure 24) - 23 10 13.5 13 - ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) - 9 36 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 9 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 9 A, di/dt = 100 A/µs VDD = 100 V (see Figure 21) - 232 2 17.5 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 9 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 21) - 328 2.8 17 ns µC A |
同様の部品番号 - STF11N65M5 |
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同様の説明 - STF11N65M5 |
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