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STGB35N35LZ データシート(PDF) 3 Page - STMicroelectronics

部品番号 STGB35N35LZ
部品情報  Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGB35N35LZ データシート(HTML) 3 Page - STMicroelectronics

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DocID12253 Rev 6
3/18
STGB35N35LZ, STGP35N35LZ
Electrical ratings
18
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
CES
Collector-emitter voltage (V
GE
= 0)
V
CES (clamped)
V
V
ECS
Emitter collector voltage (V
GE
= 0)
20
V
I
C
(1)
1.
Calculated according to the iterative formula:
Continuous collector current at T
C
= 25 °C
40
A
I
C
(1)
Continuous collector current at T
C
= 100 °C
30
A
I
CP
(2)
2.
Pulse width limited by maximum junction temperature
Pulsed collector current
80
A
V
GE
Gate-emitter voltage
V
GE (clamped)
V
P
TOT
Total dissipation at T
C
= 25 °C
176
W
E
AS
Single pulse energy
(T
C
=25 °C, L=1.6 mH, I
C
= 22 A, V
CC
= 50 V)
450
mJ
ESD
Human body model (R=1,5 k
Ω, C=100 pF)
8
kV
Machine model (R=0, C=100 pF)
800
V
Charged device model
2
kV
T
stg
Storage temperature
– 55 to 175
°C
T
j
Operating junction temperature
Table 3. Thermal data
Symbol
Parameter
Value
Unit
R
thj-case
Thermal resistance junction-case
0.85
°C/W
R
thj-amb
Thermal resistance junction-ambient
62.5
°C/W
I
C
T
C
()
T
jm a x
()
T
C
R
thj
c
V
CE
s a t
() max
() Tjmax
() IC TC
()
,
()
×
-------------------------------------------------------------------------------------------------------
=


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