nDIM

AGND

OVP

CSH

RCT

GATE

1

COMP

HSP

DAP

IS

2

3

4

5

6

7

14

13

12

11

10

9

8

NC

PGND

HSN

15

100

95

90

85

80

10

15

20

25

30

OVP

nDIM

LM3429

AGND

PGND

NC

DAP

GATE

COMP

CSH

RCT

IS

HSP

HSN

1

2

3

4

5

6

7

14

13

12

11

10

9

8

PWM

LM3429

SNVS616F – APRIL 2009 – REVISED JANUARY 2010

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Typical Boost Application Circuit

Figure 1. Boost Evaluation Board

9 Series LEDs at 1A

14-Lead TSSOP EP

Pin Descriptions

Pin

Name

Description

Application Information

Bypass with 100 nF capacitor to AGND as close to the device as

1

Input Voltage

possible in the circuit board layout.

2

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Product Folder Links: LM3429