データシートサーチシステム |
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LM3429 データシート(PDF) 2 Page - Texas Instruments |
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LM3429 データシート(HTML) 2 Page - Texas Instruments |
2 / 50 page VIN nDIM AGND OVP CSH RCT GATE 1 COMP HSP DAP IS 2 3 4 5 6 7 14 13 12 11 10 9 8 NC PGND HSN VCC 15 VIN (V) 100 95 90 85 80 10 15 20 25 30 OVP nDIM LM3429 AGND VIN PGND NC DAP GATE COMP VIN CSH RCT IS HSP VCC HSN 1 2 3 4 5 6 7 14 13 12 11 10 9 8 ILED PWM LM3429 SNVS616F – APRIL 2009 – REVISED JANUARY 2010 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Typical Boost Application Circuit Figure 1. Boost Evaluation Board 9 Series LEDs at 1A 14-Lead TSSOP EP Pin Descriptions Pin Name Description Application Information Bypass with 100 nF capacitor to AGND as close to the device as 1 VIN Input Voltage possible in the circuit board layout. 2 Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Links: LM3429 |
同様の部品番号 - LM3429 |
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同様の説明 - LM3429 |
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