IRF7905TRPBF datasheet(1/10 Pages) IRF

部品番号	IRF7905TRPBF

部品情報	Dual SO-8 MOSFET for POL

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メーカー	IRF [International Rectifier]

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07/09/08

IRF7905PbF

HEXFET® Power MOSFET

SO-8

Benefits

l Very Low RDS(on) at 4.5V VGS

l Low Gate Charge

l Fully Characterized Avalanche Voltage

and Current

l 20V VGS Max. Gate Rating

l Improved Body Diode Reverse Recovery

l 100% Tested for RG

l Lead-Free

Applications

l Dual SO-8 MOSFET for POL

Converters in Notebook Computers, Servers,

Graphics Cards, Game Consoles

and Set-Top Box

VDSS

ID

30V Q1 21.8m

:@VGS = 10V 7.8A

Q2 17.1m

:@VGS = 10V 8.9A

RDS(on) max

Absolute Maximum Ratings

Parameter

Q1 Max.

Q2 Max.

Units

VDS

Drain-to-Source Voltage

V

VGS

Gate-to-Source Voltage

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V

7.8

8.9

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V

6.2

7.1

A

IDM

Pulsed Drain Current

c

62

71

PD @TA = 25°C

Power Dissipation

2.0

W

PD @TA = 70°C

Power Dissipation

1.3

Linear Derating Factor

0.016

W/°C

TJ

Operating Junction and

°C

TSTG

Storage Temperature Range

Thermal Resistance

Parameter

Q1 Max.

Q2 Max.

Units

RθJL

Junction-to-Drain Lead

g

42

°C/W

RθJA

Junction-to-Ambient fg

62.5

± 20

30

-55 to + 150

PD - 97065B

同様の部品番号 - IRF7905TRPBF

メーカー	部品番号	データシート	部品情報
VBsemi Electronics Co.,...	IRF7905TRPBF	1Mb / 9P	Dual N-Channel 30 V (D-S) MOSFET

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